The Keysight (Agilent) 81600B is a high-performance Tunable Laser Source (TLS) module designed for the 8164A and 8164B Lightwave Measurement System mainframes. Renowned for its rapid sweep speed, exceptional wavelength accuracy, and excellent spectral purity, it is the industry standard for testing dense wavelength division multiplexing (DWDM) components, optical amplifiers, and silicon photonics devices.

Specifications

General

ParameterValue
InterfacesGPIB, LAN, USB (provided via 8164A/B mainframe)
DisplayNone (uses 8164A/B mainframe display)

Physical

ParameterValue
Power SupplyPowered directly by the 8164A/B mainframe slot
Operating Temperature10 °C to 40 °C
Dimensions (W×H×D)75 mm × 150 mm × 340 mm
Weight2.5 kg

Optical Output Characteristics

ParameterValue
Wavelength Range (Option 200)1440 nm to 1640 nm
Wavelength Range (Option 160)1450 nm to 1650 nm
Wavelength Range (Option 150)1490 nm to 1640 nm
Wavelength Range (Option 130)1260 nm to 1375 nm
Peak Output Power (Option 200)>= +3 dBm
Peak Output Power (Option 160)>= +5 dBm
Peak Output Power (Option 150)>= +5 dBm
Peak Output Power (Option 201)>= +7 dBm
Optical Power Repeatability+/- 0.01 dB (typical)
Optical Power Stability (Short-Term)+/- 0.01 dB (over 1 hour at constant temperature)
Optical Power Flatness vs. Wavelength+/- 0.1 dB (typically)
Polarization Extinction Ratio (PER)>= 18 dB (typically 20 dB)
Fiber TypePanda Polarization Maintaining Fiber (PMF)

Wavelength Control & Tuning

ParameterValue
Absolute Wavelength Accuracy+/- 10 pm (typical +/- 3.6 pm)
Wavelength Repeatability+/- 1 pm (typical +/- 0.5 pm)
Relative Wavelength Accuracy+/- 2 pm (typical +/- 1 pm)
Wavelength Resolution0.1 pm (12.5 MHz at 1550 nm)
Max Continuous Sweep Speedup to 80 nm/s
Mode-Hop-Free Tuning RangeFull wavelength range

Spectral Purity & Stability

ParameterValue
Side-Mode Suppression Ratio (SMSR)>= 45 dB (typically > 50 dB)
Signal-to-Source Spontaneous Emission Ratio (Option 200)>= 70 dB/nm (at peak, typically >= 80 dB/nm)
Signal-to-Source Spontaneous Emission Ratio (Option 160)>= 70 dB/nm
Effective Linewidth (FWHM)< 100 kHz (typically 50 kHz, coherence control off)
Coherence Control (Linewidth Broadening)> 50 MHz (typically, with coherence control enabled)
Wavelength Stability (Short-Term)+/- 1 pm (over 24 hours)

Power, Physical & Environmental

ParameterValue
Warm-up Time1 hour
Specified Accuracy Operating Temperature15 °C to 35 °C
Storage Temperature Range-40 °C to +70 °C
Relative Humidity Range< 80% R.H. (non-condensing)

Compliance & Safety

ParameterValue
Laser Safety ClassClass 1M (IEC 60825-1)

Wavelength Specifications

ParameterValue
Wavelength Range (Option 140)1370 nm to 1495 nm

Optical Outputs

ParameterValue
Number of Optical Outputs (Option 130 / 140 / 150 / 160)1 (Low SSE)
Number of Optical Outputs (Option 200 / 201)2 (Output 1: High Power, Output 2: Low SSE)
Return Loss (with angled connector)> 60 dB (typical)

Power Specifications

ParameterValue
Power Linearity±0.05 dB

Modulation

ParameterValue
Internal Modulation200 Hz to 200 kHz (square wave, 50% duty cycle)
External Analog ModulationExternal Digital Modulation = 300 Hz to 1 MHz

Wavelength Specs

ParameterValue
Wavelength Range (Option 201)1455 nm to 1640 nm
Wavelength Tuning Time (Typical)250 ms (1 nm step), 400 ms (10 nm step), 800 ms (100 nm step)

Power Specs

ParameterValue
Peak Output Power (Option 130)≥ +5 dBm
Peak Output Power (Option 140)≥ +5 dBm
Absolute Power Accuracy±0.15 dB
Power Stability (Long-Term)±0.03 dB (24 h)

Spectral Purity Specs

ParameterValue
Signal-to-Source Spontaneous Emission Ratio (Option 130)≥ 70 dB/nm (typ. ≥ 75 dB/nm)
Signal-to-Source Spontaneous Emission Ratio (Option 140)≥ 70 dB/nm (typ. ≥ 75 dB/nm)
Signal-to-Source Spontaneous Emission Ratio (Option 150)≥ 70 dB/nm (typ. ≥ 75 dB/nm)
Signal-to-Source Spontaneous Emission Ratio (Option 201)≥ 80 dB/nm (Low SSE port), ≥ 55 dB/nm (High Power port)
Relative Intensity Noise (RIN)< -145 dB/Hz (typical, at 10 MHz to 1 GHz, at peak power)

Technology

Tunable External Cavity Diode Laser (ECDL)

Applications

DWDM component testing, optical amplifier characterization, and silicon photonics testing